Author

D. L. Harmon

Observed names: D Harmon, D. Harmon, D.L. Harmon, Dave Harmon

Institution: IBM (United States)

Observed institution: IBM (United States)

OpenAlex ID: A5109095929

Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown

2002 · E.Y. Wu, A. Vayshenker, et al. · IEEE Transactions on Electron Devices · 154

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

2002 · E Wu, J Suñé, et al. · Solid-State Electronics · 125

Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films

1990 · S. Nguyen, D. Dobuzinsky, et al. · Journal of The Electrochemical Society · 94

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A Thin-Film SOI 180nm CMOS RF Switch Technology

2009 · A. Botula, A. Joseph, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 87

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

2002 · E. Y. Wu, E. J. Nowak, et al. · IBM Journal of Research and Development · 84

Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

2002 · E.Y. Wu, J. Aitken, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 83

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

2005 · E. Leobandung, H. Nayakama, et al. · Symposium on VLSI Technology · 63

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

2006 · W-H. Lee, A. Waite, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 53

Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies

2008 · F. Chen, O. Bravo, et al. · Microelectronics Reliability · 51

Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides

2000 · E.Y. Wu, D.L. Harmon, et al. · IEEE Electron Device Letters · 43

Characterization and reliability of TaN thin film resistors

2004 · T. Lee, K. Watson, et al. · IEEE International Reliability Physics Symposium proceedings · 36

New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database

2001 · E. Wu, E. Nowak, et al. · IEEE Transactions on Device and Materials Reliability · 35

Thermal conductance of IC interconnects embedded in dielectrics

2002 · D. Harmon, J. Gill, et al. · IEEE International Integrated Reliability Workshop final report · 30

Critical reliability challenges in scaling SiO2-based dielectric to its limit

2003 · E.Y. Wu, J. Suñé, et al. · Microelectronics Reliability · 29

Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

2003 · E. Wu, W. Lai, et al. · IEEE International Reliability Physics Symposium proceedings · 29

Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-k dielectrics

2004 · F. Chen, J. Gill, et al. · IEEE International Reliability Physics Symposium proceedings · 23

Ultra-thin Gate Dielectric Plasma Charging Damage in SOI Technology

2006 · W. Lai, D. Harmon, et al. · IEEE International Reliability Physics Symposium proceedings · 19

A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode

2006 · E. Wu, J. Sune, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides

2001 · E Wu, J Suñé, et al. · Microelectronic Engineering · 18

Predicting thermal behavior of interconnects

2003 · J. Gill, D. Harmon, et al. · IEEE International Integrated Reliability Workshop final report · 14

Plasma Etching of Composite Silicide Gate Electrodes

1982 · F. R. White, C. W. Koburger, et al. · Journal of The Electrochemical Society · 13

Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures

2005 · F. Chen, J. Gill, et al. · Microelectronics Reliability · 11

Optimization of Plasma Processing for Silicon-Gate FET Manufacturing Applications

1982 · A. S. Bergendahl, S. F. Bergeron, et al. · IBM Journal of Research and Development · 9

A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride–oxide dielectrics

2002 · Fen Chen, Rolf-Peter Vollertsen, et al. · Microelectronics Reliability · 7

A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications

1999 · B. Agarwala, M. Armacost, et al. · European Solid-State Device Research Conference · 7

Works count: 29

Citation count: 1,156

H-index: 18

I10-index: 22