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Hans‐Joachim L. Gossmann

Observed names: Hans-Joachim Gossmann, Hans-Joachim L Gossmann, Hans-Joachim L. Gossmann, Hans‐Joachim Gossmann
OpenAlex ID: A5111666942
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond
2013 · Bingxi Sun Wood, Fareen Adeni Khaja, et al. · ECS Transactions · 30
Advanced CMOS devices: Challenges and implant solutions
2013 · Benjamin Colombeau, Baonian Guo, et al. · physica status solidi (a) · 28
Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate
1998 · Aditya Agarwal, Anthony T. Fiory, et al. · Materials Science in Semiconductor Processing · 21
Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing
2008 · Hans-Joachim L. Gossmann · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 15
High efficiency selective emitter enabled through patterned ion implantation
2011 · Russell Low, Atul Gupta, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 11
Bulk FinFET junction isolation by heavy species and thermal implants
2014 · Fareen Adeni Khaja, Hans-Joachim L. Gossmann, et al. · International Conference on Ion Implantation Technology · 10
Ion implantation in advanced planar and vertical devices
2005 · Hans-Joachim L. Gossmann · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Finfet and gate-all-around device design and performance/yield optimization
2014 · Hans-Joachim L. Gossmann · IEEE International Conference on Solid-State and Integrated Circuit Technology · 6
Impact of extension implant energy purity and angle on the electrical characteristics of a 65nm device technology
2006 · Hans-Joachim L. Gossmann, Leonard Rubin, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
“Abnormal” angle response curves of TW/Rs for near zero tilt and high tilt channeling implants
2012 · Baonian Guo, Hans-Joachim Gossmann, et al. · AIP conference proceedings · 4
Predictive process simulation of cryogenic implants for leading edge transistor design
2012 · Hans-Joachim Gossmann, Nikolas Zographos, et al. · AIP conference proceedings · 4
Reverse Diode Leakage in Spike-Annealed Ultra-Shallowjunctions
2001 · Hans-Joachim L. Gossmann, Tao Feng, et al. · MRS Proceedings · 4
Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing
2008 · Helen Maynard, Christopher Hatem, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 3
Sputtering of Si with decaborane cluster ions
2002 · Marek Sosnowski, Maria A. Albano, et al. · Applied Physics Letters · 3
Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
1999 · Hans‐Joachim L. Gossmann · Materials Research Society eBooks · 2
Device and process design of leading edge transistors for performance and yield
2016 · Hans-Joachim L. Gossmann, Steven S. Sherman, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1
Fabricating high efficiency solar cells with high sheet resistance emitters by ion implantation and contact resistance modeling
2013 · Vikram Bhosle, Basil Tsefrekas, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 1
Advanced ion implantation applications for leading edge transistor design
2012 · Hans-Joachim L. Gossmann, Yuri Erokhin · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1
FinFET and Nanowire-FET Device Design and Integration: FEOL Challenges and Solutions
2018 · Hans-Joachim L. Gossmann, Benjamin Colombeau, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
Process characterization for hydrogen and helium implantation
2014 · Baonian Guo, Hans-Joachim L. Gossmann, et al. · International Conference on Ion Implantation Technology
Fin Doping By Hot Implant for 14nm Finfet Technology and Beyond
2013 · Bingxi Sun Wood, Fareen Adeni Khaja, et al. · ECS Meeting Abstracts
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PIN diode steering element formation for 3D X-bar memory
2012 · Fareen Adeni Khaja, Hans-Joachim Gossmann, et al. · AIP conference proceedings
Precision ion implantation: A critical tool for advanced device processing
2008 · Hans-Joachim L. Gossmann, Thirumal Thanigaivelan, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
Next Generation Angle Control for Medium Current and High Energy Implanters
2008 · Joseph C. Olson, Atul Gupta, et al. · AIP conference proceedings
Ion Implantation
2007 · Michael Ameen, Ivan Berry, et al. · CRC Press eBooks
Works count: 30
Citation count: 157
H-index: 7
I10-index: 6
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