Author

Takara Shinohara

Observed names: T. SHINOHARA, T. Shinohara

Institutions: Tohoku University, Sumitomo Metal Mining (Japan), Institute for Materials Research, Tohoku University

Observed institutions: Toshiba (Japan), Tokai University, IBM (United States), Tohoku University, Sumitomo Metal Mining (Japan), Nissan (Japan), Institute for Materials Research, Tohoku University, Hitachi Solutions Technology, Ltd. (Japan), Hitachi (Japan)

OpenAlex ID: A5114230508

Monocarborane cluster as a stable fluorine-free calcium battery electrolyte

2021 · Kazuaki Kisu, Sangryun Kim, et al. · Scientific Reports · 112

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

2005 · E. Leobandung, H. Nayakama, et al. · Symposium on VLSI Technology · 63

Deformation analysis of surface flaws in stainless steel wire drawing

2005 · T. Shinohara, K. Yoshida · Journal of Materials Processing Technology · 42

Complex Hydride‐Based Gel Polymer Electrolytes for Rechargeable Ca‐Metal Batteries

2024 · Takara Shinohara, Kazuaki Kisu, et al. · Advanced Science · 18

SOI pressure sensor

1992 · P.J. French, H. Muro, et al. · Sensors and Actuators A Physical · 17

A single-chip 10 Gb/s transceiver LSI using SiGe SOI/BiCMOS

2002 · S. Ueno, K. Watanabe, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 15

Investigating the ion conductivity and synthesis conditions of calcium monocarborane solid-state electrolytes

2024 · Takara Shinohara, Kazuaki Kisu, et al. · Energy Advances · 10

Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology

1998 · T. Ushiki, K. Kawai, et al. · IEEE Transactions on Electron Devices · 10

A radiation-hardened 10 K-gate CMOS gate array

1989 · H. Hatano, I. Yoshii, et al. · IEEE Transactions on Nuclear Science · 10

Highly-reliable, low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process

2002 · K. Ino, T. Ushiki, et al. · Symposium on VLSI Technology · 9

Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition

1998 · T. Ushiki, M.-C. Yu, et al. · IEEE International Reliability Physics Symposium proceedings · 9

Small voltage hysteresis and flat plateaus in Ca-metal batteries using a Ti-based NASICON cathode

2025 · Kohei Shibuya, Kazuaki Kisu, et al. · Journal of Materials Chemistry A · 6

Enabling Ca plating and stripping by electrolyte manipulation in low-volatility solvents for Ca metal batteries

2025 · Kohei Shibuya, Kazuaki Kisu, et al. · Chemical Communications · 6

Tailoring Ca2+/Li+ Dual-Cation Gel Polymer Electrolytes via Cross-Linking for Reductive and Oxidative Stability in Ca-Metal Batteries

2025 · Takara Shinohara, Kazuaki Kisu, et al. · ACS Applied Energy Materials · 3

SOI pressure sensor

2002 · P.J. French, H. Muro, et al. · International Conference on Solid-State Sensors, Actuators and Microsystems · 3

Change in the Short Range Order in the Al — γ-MnOOH Mixed Systems by Mechanical Stressing

1999 · S. Sekino, Tetsuhiko Isobe, et al. · Materials science forum · 3

Low on-resistance lateral U-gate MOSFET with DSS pattern layout

2003 · Y. Shimoida, Y. Hayami, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2

600 V-GTBT with high current gains

2002 · Y. Murakami, T. Hayashi, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2

Change in the Short Range Order in the Al Transition Metal Hydroxides Mixed System by Mechanical Stressing

2000 · S. Sekino, Tetsuhiko Isobe, et al. · Journal of Metastable and Nanocrystalline Materials · 1

Definite Observation of Interfacial Charge Transfer in Graphene Transistor by Using Soft X-ray 3D Scanning Photoelectron Microscopy

2012 · H. Fukidome, N. Nagamura, et al. · International Conference on Solid State Devices and Materials (SSDM)

Effect of flaw removal on billets and wires in rolling and drawing

2007 · Kazunari Yoshida, T. Shinohara · HUTNIK - WIADOMOŚCI HUTNICZE

FEM analysis of surface flaw of wire during drawing used in spring of automobile and medical instrument

2005 · Keiichi Yoshida, T. Shinohara · HUTNIK - WIADOMOŚCI HUTNICZE

PLF-13: Deformation Analysis of Surface Crack in Rolling and Wire Drawing(PLF-III: PLASTIC FORMING AND ADVANCED PRODUCTS)

2005 · T. SHINOHARA, K. YOSHIDA · The Proceedings of the JSME Materials and Processing Conference (M&P)

Comparison of MA Processes and Products from Ni(OH)2 with Al or Al(OH)3

2001 · S. Sekino, Mamoru Senna, et al. · Journal of Metastable and Nanocrystalline Materials

Change in the Short Range Order in the Al — γ-MnOOH Mixed Systems by Mechanical Stressing

1999 · S. Sekino, Tetsuhiko Isobe, et al. · Journal of Metastable and Nanocrystalline Materials

Works count: 25

Citation count: 341

H-index: 9

I10-index: 9