Work

Improvement of metal photo process margin with OPC and CMP for 0.14 μm DRAM technology node and beyond

Year: 2001

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.435684

Authors: Dong-il Bae, Jun-Sik Bae, Seung-Won Sung, Ji-Soong Park, Sang-Uhk Rhie, Dong-Won Shin, Tae-Young Chung, Kinam Kim

Institution: Samsung Electronics (South Korea)

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W1978220300

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