Get started
Author

M. Vaille

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
2000 · P. Vennéguès, B. Beaumont, et al. · Journal of Applied Physics · 202
Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
1998 · P Vennéguès, B Beaumont, et al. · Journal of Crystal Growth · 134
Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy
2000 · H. Lahrèche, M. Leroux, et al. · Journal of Applied Physics · 96
High quality GaN grown by MOVPE
1997 · B. Beaumont, M. Vaille, et al. · Journal of Crystal Growth · 77
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
1998 · B. Beaumont, M. Vaille, et al. · MRS Internet Journal of Nitride Semiconductor Research · 62
PDF
Study of open-core dislocations in GaN films on (0001) sapphire
1997 · P. Vennéguès, B. Beaumont, et al. · Applied Physics Letters · 58
Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)
1997 · P. Vennegues, B. Beaumont, et al. · Journal of Crystal Growth · 57
A Two-Step Method for Epitaxial Lateral Overgrowth of GaN
1999 · B. Beaumont, V. Bousquet, et al. · physica status solidi (a) · 46
Epitaxial lateral overgrowth of GaN on Si (111)
2002 · E. Feltin, B. Beaumont, et al. · Journal of Applied Physics · 44
Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates
1998 · B Beaumont, P Gibart, et al. · Journal of Crystal Growth · 42
Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy
1998 · G Nataf, B Beaumont, et al. · Journal of Crystal Growth · 32
Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
1999 · H Lahrèche, P Vennéguès, et al. · Semiconductor Science and Technology · 27
PDF
In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
2002 · H. P. D. Schenk, P. de Mierry, et al. · Applied Physics Letters · 23
Raman investigations of reaction process in MOVPE
1986 · Y. Monteil, M.P. Berthet, et al. · Journal of Crystal Growth · 21
Raman investigations on AsH3 decomposition in MOVPE
1988 · Y. Monteil, R. Favre, et al. · Journal of Crystal Growth · 20
Alternative N precursors and Mg doped GaN grown by MOVPE
1996 · B. Beaumont, M. Vaille, et al. · MRS Internet Journal of Nitride Semiconductor Research · 15
PDF
Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy
2001 · H.P.D. Schenk, E. Feltin, et al. · physica status solidi (a) · 12
Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy
1997 · H Teisseyre, M Leszczynski, et al. · Semiconductor Science and Technology · 12
PDF
Vertical Cavity InGaN LEDs Grown by MOVPE
2002 · P. de Mierry, J.M. Bethoux, et al. · physica status solidi (a) · 11
Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy
2001 · H.P.D. Schenk, E. Feltin, et al. · physica status solidi (a) · 9
TEM Study of the Behavior of Dislocations during ELO of GaN
1999 · V. Bousquet, P. Vennéguès, et al. · physica status solidi (b) · 7
Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)
2000 · H Lahreche, M Vaille, et al. · Diamond and Related Materials · 5
Metallorganic vapor phase epitaxy reactor for i n s i t u optical investigations
1988 · M. Vaille, R. Favre, et al. · Review of Scientific Instruments · 3
High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy
1999 · G. Nataf, B. Beaumont, et al. · Materials Science and Engineering B · 2
Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures
1999 · H. Lahrèche, M. Vaille, et al. · physica status solidi (a)
Works count: 26
Citation count: 1,017
H-index: 15
I10-index: 19
Year
Topic
Type