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Kai Zhang

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
2017 · Kai Zhang, Yuechan Kong, et al. · IEEE Electron Device Letters · 116
A > 3 kV/2.94 m $\Omega\cdot$ cm 2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique
2019 · Tao Zhang, Jinfeng Zhang, et al. · IEEE Electron Device Letters · 72
Study of surface leakage current of AlGaN/GaN high electron mobility transistors
2014 · YongHe Chen, Kai Zhang, et al. · Applied Physics Letters · 63
Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
2018 · Wen Wang, Xinxin Yu, et al. · IEEE Journal of the Electron Devices Society · 58
Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V
2023 · Yinhe Wu, Shuang Liu, et al. · IEEE Transactions on Electron Devices · 56
A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V
2018 · Tao Zhang, Jincheng Zhang, et al. · IEEE Electron Device Letters · 55
Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistors
2021 · Tianyu Yu, Weifeng Lü, et al. · Microelectronics Journal · 45
High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2
2019 · Tao Zhang, Jincheng Zhang, et al. · Applied Physics Express · 40
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Heterointegrated Ga 2 O 3 -on-SiC RF MOSFETs With f T / f max of 47/51 GHz by Ion-Cutting Process
2023 · Xinxin Yu, Wenhui Xu, et al. · IEEE Electron Device Letters · 37
Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications
2012 · JunShuai Xue, JinCheng Zhang, et al. · Journal of Applied Physics · 36
Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors
2013 · Kai Zhang, JunShuai Xue, et al. · Journal of Applied Physics · 35
High ${f}_{{T}}$ AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio
2018 · Shujun Dai, Yu Zhou, et al. · IEEE Electron Device Letters · 32
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
2017 · Yi Li, Yaxiong Guo, et al. · IEEE Transactions on Electron Devices · 32
Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors
2014 · Xiao-Hua Ma, Wei-Wei Chen, et al. · Applied Physics Letters · 28
Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors
2019 · Wenjing Song, Yi Li, et al. · IEEE Transactions on Electron Devices · 26
High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel
2023 · Xinxin Yu, Hehe Gong, et al. · IEEE Electron Device Letters · 23
High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology
2017 · Kai Zhang, Cen Kong, et al. · Applied Physics Express · 21
Trap states in AlGaN channel high-electron-mobility transistors
2013 · ShengLei Zhao, Kai Zhang, et al. · Applied Physics Letters · 18
Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
2013 · Kai Zhang, Meng-Yi Cao, et al. · Chinese Physics B · 18
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High temperature characteristics of AlGaN/GaN high electron mobility transistors
2011 · Li-Yuan Yang, Yue Hao, et al. · Chinese Physics B · 18
Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer
2015 · Chongnan Liao, Xuming Zou, et al. · IEEE Electron Device Letters · 17
Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes
2021 · HePeng Zhang, JunShuai Xue, et al. · Journal of Applied Physics · 16
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
2018 · Ting-Ting Liu, Kai Zhang, et al. · Chinese Physics B · 16
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Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress
2015 · Wei-Wei Sun, Xue-Feng Zheng, et al. · Chinese Physics B · 16
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Quaternary InAlGaN barrier high-electron-mobility transistors withfmax> 400 GHz
2017 · Guangrun Zhu, Kai Zhang, et al. · Applied Physics Express · 15
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Works count: 84
Citation count: 1,167
H-index: 18
I10-index: 37
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