Author

C. Barratt

Observed names: C Barratt, Curt Barratt

Observed institutions: University of California, Los Angeles, University of Florida, Sandia National Laboratories

OpenAlex ID: A5025027880

Inductively coupled plasma etching of GaN

1996 · R. J. Shul, G. B. McClellan, et al. · Applied Physics Letters · 223

High-density plasma etching of compound semiconductors

1997 · R. J. Shul, G. B. McClellan, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 128

Comparison of dry etch techniques for GaN

1996 · R.J. Shul, G.B. McClellan, et al. · Electronics Letters · 65

Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures

1992 · C. Constantine, C. Barratt, et al. · Applied Physics Letters · 50

Microwave CI 2 /H 2 discharges for high rate etching of InP

1992 · C. Constantine, C. Barratt, et al. · Electronics Letters · 33

Chlorine-Based Plasma Etching of GaN

1996 · R. J. Shul, R. D. Briggs, et al. · MRS Proceedings · 32

Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors

1997 · F. Ren, J. W. Lee, et al. · Applied Physics Letters · 22

Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries

1997 · C. B. Vartuli, S. J. Pearton, et al. · Journal of The Electrochemical Society · 21

Dry etching of via connections for InP power devices

1993 · C. Constantine, C. Barratt, et al. · Electronics Letters · 21

Hydrogenation effects during high-density plasma processing of GaAs MESFETS

1997 · F Ren, J W Lee, et al. · Semiconductor Science and Technology · 18

Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors

1997 · J.W Lee, C.R Abernathy, et al. · Solid-State Electronics · 17

Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes

1997 · J. W. Lee, C. R. Abernathy, et al. · Journal of The Electrochemical Society · 15

Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

1997 · F. Ren, J. W. Lee, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 11

Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas

1998 · J.W Lee, C.R Abernathy, et al. · Solid-State Electronics · 9

Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

1996 · C. Constantine, D. Johnson, et al. · MRS Proceedings · 7

Anisotropic electron cyclotron resonance etchingof tungsten films on GaAs

1994 · R.J. Shul, D.J. Rieger, et al. · Electronics Letters · 4

The Stark effect on an excited hydrogen atom

1983 · C. Barratt · American Journal of Physics · 2

Development and Ramping of pHEMT in an "HBT Fab"

2007 · Mike Fresina, C. Barratt, et al. · 1

Dry etching for the fabrication of flat panel displays

1995 · Curt Barratt, David J. Johnson, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1

Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

1996 · Sandia National Labs., Albuquerque, NM (United States), C Constantine, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Works count: 20

Citation count: 680

H-index: 12

I10-index: 13