2006 · I. Kanno, S. Hishiki, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 15

Fast response of InSb Schottky detector

2007 · Ikuo Kanno, Shigeomi Hishiki, et al. · Review of Scientific Instruments · 13

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Undoped InSb Schottky detector for gamma-ray measurements

2005 · S. Hishiki, I. Kanno, et al. · IEEE Transactions on Nuclear Science · 11

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First detection of gamma-ray peaks by an undoped InSb Schottky detector

2006 · Shigeomi Hishiki, Yoshitaka Kogetsu, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 10

Cryogenic neutron detector by InSb semiconductor detector with high-density helium-3 gas converter

2003 · T Nakamura, M Katagiri, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 9

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al 2 O 3 interlayer and its internal charge analysis

2020 · Ryusei Oka, Keisuke Yamamoto, et al. · Japanese Journal of Applied Physics · 7

Photon detection by a cryogenic InSb detector

2005 · Ikuo Kanno, Shigeomi Hishiki, et al. · Review of Scientific Instruments · 7

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Cryogenic neutron detector comprising an InSb semiconductor detector and a supercritical helium-3 gas converter

2004 · Tatsuya Nakamura, Masaki Katagiri, et al. · Review of Scientific Instruments · 6

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AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

2022 · Akio WAKEJIMA, Arijit BOSE, et al. · IEICE Transactions on Electronics · 5

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Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

2022 · Arijit Bose, Debaleen Biswas, et al. · IEICE Electronics Express · 5

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Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

2008 · Naoya Iwamoto, Shinobu Onoda, et al. · Materials science forum · 5

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions

2007 · Takeshi Ohshima, Takahiro Satoh, et al. · Materials science forum · 5

Averaged Currents Induced by Alpha Particles in an InSb Compound Semiconductor Detector

2008 · Ikuo Kanno, Shigeomi Hishiki, et al. · Journal of Nuclear Science and Technology · 4

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High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

2007 · Shigeomi Hishiki, Yoshitaka Kogetsu, et al. · Japanese Journal of Applied Physics · 4

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High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression

2022 · Keisuke Yamamoto, Dong Wang, et al. · Applied Physics Express · 3

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Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor

2003 · I. Kanno, S. Hishiki, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 3

Resonance properties of leaky surface acoustic waves and plate waves on LiTaO3 thin plate bonded to SiC-on-Si substrate

2025 · Noriyuki Watanabe, Shoji Kakio, et al. · Japanese Journal of Applied Physics · 2

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Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

2008 · Sergey A. Reshanov, Gerhard Pensl, et al. · Materials science forum · 2

Works count: 46

Citation count: 279

H-index: 10

I10-index: 11