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Walter Rieger

Observed names: Rieger, W.F., W. RIEGER, W. Rieger
OpenAlex ID: A5049302923
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 · O. Ambacher, J. Smart, et al. · Journal of Applied Physics · 3,104
Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
1996 · W. Rieger, T. Metzger, et al. · Applied Physics Letters · 227
Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy
1996 · O. Ambacher, W. Rieger, et al. · Solid State Communications · 126
Defect-related optical transitions in GaN
1996 · W. Rieger, R. Dimitrov, et al. · Physical review. B, Condensed matter · 93
The first monomeric, volatile bis‐azide single‐source precursor to Gallium nitride thin films
1996 · Alexander Miehr, Oliver Ambacher, et al. · Chemical Vapor Deposition · 46
Hydrogen in Gallium Nitride Grown by MOCVD
1997 · O. Ambacher, H. Angerer, et al. · physica status solidi (a) · 45
Mechanism of Cluster Formation in a Clean Silane Discharge
1993 · S. Vepřek, K. Schopper, et al. · Journal of The Electrochemical Society · 43
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Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
1999 · R. Dimitrov, A. Mitchell, et al. · Japanese Journal of Applied Physics · 36
Reliability considerations of III-nitride microelectronic devices
1999 · Joachim Würfl, Vera Abrosimova, et al. · Microelectronics Reliability · 31
Growth of by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
1996 · O. Ambacher, R. Dimitrov, et al. · Journal of Crystal Growth · 26
PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
1996 · H. Angerer, O. Ambacher, et al. · MRS Internet Journal of Nitride Semiconductor Research · 24
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AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C
1999 · J. Hilsenbeck, W. Rieger, et al. · physica status solidi (a) · 23
Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
1997 · O. Ambacher, R. Dimitrov, et al. · Journal of Crystal Growth · 22
Clusters in A Silane Glow Discharge: Mechanism of Their Formation and How to Avoid Them
1993 · S. Vepřek, O. Ambacher, et al. · MRS Proceedings · 11
Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
1999 · M. J. Murphy, B. E. Foutz, et al. · MRS Internet Journal of Nitride Semiconductor Research · 10
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Defect Transitions in GaN Between 3.0 and 3.4 eV
1996 · W. Rieger, O. Ambacher, et al. · MRS Proceedings · 6
Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
1998 · M. J. Murphy, B. E. Foutz, et al. · MRS Proceedings · 3
ChemInform Abstract: The First Monomeric, Volatile Bis‐Azide Single‐Source Precursor to Gallium Nitride Thin Films.
1996 · A. MIEHR, O. AMBACHER, et al. · ChemInform
Improved Aluminum Nitride Thin Films Grown By Mocvd From Tritertiarybutylaluminum And Ammonia
1996 · T. Metzger, E. Born, et al. · MRS Proceedings
Works count: 20
Citation count: 3,876
H-index: 13
I10-index: 15
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