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Author

Yoshihiro Ueoka

Observed names: Ueoka, Yoshihiro, Y. Ueoka
Institution: Tosoh (Japan)
ORCID: 0000-0001-6420-975X
Observed ORCID: 0000-0001-6420-975X
OpenAlex ID: A5049819823
Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
2013 · Satoshi Urakawa, Shigekazu Tomai, et al. · Applied Physics Letters · 98
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Effect of contact material on amorphous InGaZnO thin-film transistor characteristics
2014 · Yoshihiro Ueoka, Yasuaki Ishikawa, et al. · Japanese Journal of Applied Physics · 43
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Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress
2014 · Yoshihiro Ueoka, Yasuaki Ishikawa, et al. · ECS Journal of Solid State Science and Technology · 41
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The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors
2013 · Haruka Yamazaki, Yasuaki Ishikawa, et al. · ECS Journal of Solid State Science and Technology · 31
Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy
2013 · Y. Ueoka, Y. Ishikawa, et al. · Journal of Applied Physics · 26
Comparison between Effects of PECVD-SiOxand Thermal ALD-AlOxPassivation Layers on Characteristics of Amorphous InGaZnO TFTs
2015 · Jun Tanaka, Yoshihiro Ueoka, et al. · ECS Journal of Solid State Science and Technology · 23
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Analysis of printed silver electrode on amorphous indium gallium zinc oxide
2014 · Yoshihiro Ueoka, Takahiro Nishibayashi, et al. · Japanese Journal of Applied Physics · 17
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Thermal distribution in amorphous InSnZnO thin‐film transistor
2013 · Satoshi Urakawa, Shigekazu Tomai, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 11
Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate
2021 · Takahiro Nagata, Yuya Suemoto, et al. · Japanese Journal of Applied Physics · 8
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Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates
2012 · Yoshihiro Ueoka, Kenta Shingu, et al. · Japanese Journal of Applied Physics · 8
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Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering
2020 · Maki Kushimoto, Tadayoshi Sakai, et al. · physica status solidi (a) · 7
Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga 2 O 3 passivated by sputtering
2018 · Yoshihiro Ueoka, Manato Deki, et al. · Japanese Journal of Applied Physics · 7
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Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization
2022 · Takahiro Nagata, Yuya Suemoto, et al. · ACS Omega · 6
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Impact of film composition on crystal structure and ferroelectricity in (Al1−x−yGaxScy)N ternary wurtzite thin films
2025 · Reika Ota, Nana Sun, et al. · APL Materials · 4
Fabrication and characterization of a high-electron-mobility transistor using a sputtering buffer layer on a Si substrate
2023 · Yoshihiro Ueoka, Yuya Suemoto, et al. · Journal of Crystal Growth · 3
Highly reliable a-InGaZnO thin film transistors with new SiNx gate insulators
2012 · Haruka Yamazaki, Mami Fujii, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 3
Analysis of electron traps in SiO2/IGZO interface by cyclic capacitance-voltage method
2012 · Yoshihiro Ueoka, Mami Fujii, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 3
Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates
2011 · Yoshihiro Ueoka, Hiroshi Yano, et al. · Materials science forum · 3
Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer
2014 · Chaiyanan Kulchaisit, Mami Fujii, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 2
Diffusion and trapping of silicon in wurtzite gallium nitride
2025 · Keito Mimura, Ryusuke Nakamura, et al. · Materials Science in Semiconductor Processing · 1
Analysis of Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Capacitance–Voltage Method
2012 · Yoshihiro Ueoka, Mami Fujii, et al. · MRS Proceedings · 1
Highly reliable a-IGZO TFTs with SiN X gate insulator deposited by SiF 4 /N 2
2012 · Haruka Yamazaki, Mami N. Fujii, et al. · International Workshop on Active-Matrix Flatpanel Displays and Devices · 1
Fabrication of (Mg,Si)N Films by Reactive RF Magnetron Sputtering Method and Their Structure and Electric Properties
2025 · 影山 壮太郎, Sotaro Kageyama, et al. · Tokyo Tech Research Repository (Tokyo Institute of Technology)
Diamond Crystal Growth on Orientation-Controlled Carbon-Based Materials
2024 · Masaki Matsumoto, Keiji Taniya, et al. · ECS Meeting Abstracts
Stress control of GaN layer by sputtering with low oxygen GaN target
2021 · Yuya Suemoto, Yoshihiro Ueoka, et al. · The Japan Society of Applied Physics
Works count: 42
Citation count: 347
H-index: 8
I10-index: 8
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