Author

Masashi Sasagawa

Observed names: M Sasagawa, M. Sasagawa

Institution: ROHM

Observed institutions: ROHM, The University of Tokyo

OpenAlex ID: A5074920377

A Study on SiC Devices in Synchronous Rectification of DC-DC Converter

2007 · Tsuyoshi Funaki, Masashi Matsushita, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 42

Large current SiC power devices for automobile applications

2010 · T. Nakamura, M. Sasagawa, et al. · International Power Electronics Conference (IPEC) · 26

Novel developments towards increased SiC power device and module efficiency

2012 · T. Nakamura, M. Aketa, et al. · IEEE Energytech · 25

Multi-chip SiC DMOSFET half-bridge power module for high temperature operation

2012 · Tsuyoshi Funaki, Masashi Sasagawa, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 24

A study on the high frequency operation of DC-DC converter with SiC DMOSFET

2010 · M. Sasagawa, T. Nakamura, et al. · International Power Electronics Conference (IPEC) · 23

Characterization of SiC power module for high switching frequency operation

2010 · Tsuyoshi Funaki, Hiroyasu Inoue, et al. · IEICE Electronics Express · 9

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Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

2003 · K. Kita, M. Sasagawa, et al. · International Workshop on Gate Insulator (IWGI) · 5

High-performance SiC power devices and modules with high temperature operation

2011 · T. Nakamura, Y. Nakano, et al. · International Symposium on VLSI Design, Automation and Test · 4

Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

2003 · Koji Kita, Masashi Sasagawa, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3

High-performance SiC power devices and modules with high temperature operation

2011 · T. Nakamura, Y. Nakano, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 · Koji Kita, Masashi Sasagawa, et al. · MRS Proceedings · 1

Post-deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

2004 · M. Sasagawa, K. Kita, et al. · International Conference on Solid State Devices and Materials (SSDM)

ゲルマニウム上のスパッタHfO 2 (酸化ハフニウム )の成長低下

2004 · K Kita, M Sasagawa, et al.

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 · Koji Kita, Masashi Sasagawa, et al. · MRS Proceedings

Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

2003 · Haruka Shimizu, Masashi Sasagawa, et al. · International Conference on Solid State Devices and Materials (SSDM)

New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement

2003 · Koji Kita, Masashi Sasagawa, et al. · Japanese Journal of Applied Physics

New Method for Characterizing Dielectric Properties of High-k Films Using Time-Dependent Open-Circuit Potential Measurement

2002 · Koji Kita, Masashi Sasagawa, et al. · International Conference on Solid State Devices and Materials (SSDM)

Works count: 17

Citation count: 163

H-index: 6

I10-index: 5