Author

Eleftherios G. Ioannidis

Observed names: E. G. Ioannidis, E. Ioannidis, E.G. Ioannidis, Eleftherios Ioannidis, Ioannidis, E.G., Ελευθέριος Ιωαννίδης, Ιωαννίδης, Ελευθέριος Γ., Ιωαννίδης, Ελευθέριος Γεωργίου

Institution: AMS (Austria)

Observed institutions: Institut polytechnique de Grenoble, AMS (Austria), Aristotle University of Thessaloniki, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Micro and Nanotechnology Innovation Centre, STMicroelectronics (France), Institut de Microélectronique, Electromagnétisme et Photonique, Institut Néel, Laboratoire d'Électronique des Technologies de l'Information, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes

ORCID: 0000-0002-1090-2070

Observed ORCID: 0000-0002-1090-2070

OpenAlex ID: A5084749665

Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs

2012 · E.G. Ioannidis, C.A. Dimitriadis, et al. · Solid-State Electronics · 74

Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

2015 · T.A. Karatsori, C.G. Theodorou, et al. · Solid-State Electronics · 73

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

2014 · Christoforos G. Theodorou, Eleftherios G. Ioannidis, et al. · IEEE Transactions on Electron Devices · 59

Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

2011 · E. G. Ioannidis, S. Haendler, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 53

Toward Automated Defect Extraction From Bias Temperature Instability Measurements

2021 · Dominic Waldhoer, Christian Schleich, et al. · IEEE Transactions on Electron Devices · 52

Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise

2010 · E. G. Ioannidis, A. Tsormpatzoglou, et al. · Journal of Applied Physics · 45

Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs

2010 · Eleftherios G. Ioannidis, Andreas Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 42

Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

2015 · E. G. Ioannidis, C. G. Theodorou, et al. · IEEE Electron Device Letters · 40

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

2021 · J. Michl, A. Grill, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 34

Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

2015 · Eleftherios G. Ioannidis, Christoforos G. Theodorou, et al. · IEEE Transactions on Electron Devices · 30

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm

2014 · E.G. Ioannidis, S. Haendler, et al. · Solid-State Electronics · 26

Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature

2015 · C.G. Theodorou, E.G. Ioannidis, et al. · Solid-State Electronics · 25

Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

2015 · Theano A. Karatsori, Andreas Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 24

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

2012 · Christoforos G. Theodorou, Eleftherios G. Ioannidis, et al. · European Solid-State Device Research Conference · 24

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs

2015 · Christoforos G. Theodorou, Eleftherios G. Ioannidis, et al. · IEEE International Reliability Physics Symposium proceedings · 22

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

2014 · E. G. Ioannidis, S. Haendler, et al. · European Solid-State Device Research Conference · 15

Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

2016 · E.G. Ioannidis, S. Haendler, et al. · Solid-State Electronics · 14

Impact of dynamic variability on the operation of CMOS inverter

2013 · E.G. Ioannidis, S. Haendler, et al. · Electronics Letters · 11

On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors

2021 · K. Tselios, D. Waldhor, et al. · IEEE Transactions on Device and Materials Reliability · 10

Impact of low‐frequency noise variability on statistical parameter extraction in ultra‐scaled CMOS devices

2014 · E.G. Ioannidis, C.G. Theodorou, et al. · Electronics Letters · 10

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

2013 · E. G. Ioannidis, S. Haendler, et al. · International Conference on Noise and Fluctuations · 10

Low-frequency noise behavior of n-channel UTBB FD-SOI MOSFETs

2013 · C. G. Theodorou, E. G. Ioannidis, et al. · International Conference on Noise and Fluctuations · 10

Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

2012 · C. G. Theodorou, E. G. Ioannidis, et al. · International Semiconductor Conference Dresden-Grenoble (ISCDG) · 10

Characterization and modeling of low frequency noise in CMOS inverters

2013 · E.G. Ioannidis, S. Haendler, et al. · Solid-State Electronics · 9

Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

2010 · E. G. Ioannidis, C. G. Theodorou, et al. · Journal of Applied Physics · 9

Works count: 46

Citation count: 780

H-index: 15

I10-index: 23