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K. Takahei

Intra-4f-shell luminescence excitation and quenching mechanism of Yb in InP
1989 · K. Takahei, A. Taguchi, et al. · Journal of Applied Physics · 118
Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping
1994 · K. Takahei, A. Taguchi, et al. · Journal of Applied Physics · 107
Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition
1988 · Peter S. Whitney, Kunihiko Uwai, et al. · Applied Physics Letters · 106
V-grooved substrate buried heterostructure InGaAsP/InP laser
1981 · H. Ishikawa, H. Imai, et al. · Electronics Letters · 70
Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InP
1987 · H. Nakagome, K. Takahei, et al. · Journal of Crystal Growth · 69
Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm
1988 · P.S. Whitney, K. Uwai, et al. · Electronics Letters · 49
V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 µm wavelength
1982 · H. Ishikawa, H. Imai, et al. · IEEE Journal of Quantum Electronics · 47
Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm
1979 · H. Kawaguchi, K. Takahei, et al. · Electronics Letters · 41
Photoluminescence-excitation analysis of Er-doped GaAs grown by metalorganic vapor phase deposition
1995 · K. Takahei, A. Taguchi · Journal of Applied Physics · 38
Photoluminescence excitation spectroscopy of GaAs:Er,O in the near-band-edge region
1996 · R. A. Hogg, K. Takahei, et al. · Journal of Applied Physics · 35
Atomic configurations of Er centers in GaAs:Er,O and AlGaAs:Er,O studied by site-selective luminescence spectroscopy
1997 · K. Takahei, A. Taguchi, et al. · Journal of Applied Physics · 32
Low temperature liquid phase epitaxy growth for room-temperature cw operation of 1.55-μm InGaAsP/InP double-heterostructure laser
1980 · K. Takahei, H. Hagai, et al. · Applied Physics Letters · 31
Stress tests on 1.3 μm buried-heterostructure laser diode
1983 · T. Ikegami, K. Takahei, et al. · Electronics Letters · 28
Local structures around Er atoms in GaAs:Er,O studied by fluorescence EXAFS and photoluminescence
2000 · H Ofuchi, T Kubo, et al. · Microelectronic Engineering · 19
Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition
1998 · T. Ishiyama, E. Katayama, et al. · Journal of Applied Physics · 19
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Facet degradation and passivation of InGaAsP/InP lasers
1982 · M. Fukuda, K. Takahei, et al. · Applied Physics Letters · 19
Studies of GaAs:Er impact excited electroluminescence devices
1994 · S. J. Chang, K. Takahei · Applied Physics Letters · 18
A high-stability laser-pumped Cs gas-cell frequency standard
2002 · Y. Ohuchi, H. Suga, et al. · Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) · 16
Evaluation of the energy-transfer rate between an Er 4f shell and a Si host in Er-doped Si
1998 · A. Taguchi, K. Takahei, et al. · Journal of Applied Physics · 16
InGaAsP/InP buried-heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors
1981 · S. Adachi, H. Kawaguchi, et al. · Journal of Applied Physics · 15
Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er
1994 · Y. Kido, A. Ikeda, et al. · Physical review. B, Condensed matter · 14
LPE growth of 1.5–1.6 μm In1−xGaxAs1−yPy crystals by a modified source-seed method
1981 · K. Takahei, H. Nagai · Journal of Crystal Growth · 14
Design analysis of a sapphire loaded cavity for a spaceborne hydrogen maser
2002 · T. Morikawa, K. Takahei, et al. · Conference on Precision Electromagnetic Measurements · 12
Er-related trap levels in GaAs:Er,O studied by optical spectroscopy under hydrostatic pressure
1997 · R. A. Hogg, K. Takahei, et al. · Physical review. B, Condensed matter · 12
Direct observation of the spatial hole burning and the saturation of the spontaneous emission in InGaAsP/InP lasers
1980 · H. Kawaguchi, K. Takahei · IEEE Journal of Quantum Electronics · 11
Works count: 48
Citation count: 1,043
H-index: 17
I10-index: 26
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