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Semiconductor Leading Edge Technologies, Inc (Japan)
Homepage:
selete.co.jp
Alternate names:
Semiconductor Leading Edge Technologies,
Semiconductor Leading Edge Technologies, Inc,
株式会社半導体先端テクノロジーズ
ROR:
0523jgb37
OpenAlex ID:
I4405276234
On-Chip Optical Interconnect
2009
·
Keishi Ohashi
, Kenichi Nishi
, et al.
·
Proceedings of the IEEE
·
235
First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics
2005
·
N. Umezawa
, K. Shiraishi
, et al.
·
Applied Physics Letters
·
161
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach
2004
·
Kenji Shiraishi
, Keisaku Yamada
, et al.
·
Japanese Journal of Applied Physics
·
146
Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates
2008
·
K. Ohmori
, T. Matsuki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
114
Carbon Nanotubes for VLSI: Interconnect and Transistor Applications
2010
·
Yuji Awano
, Shintaro Sato
, et al.
·
Proceedings of the IEEE
·
107
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
2006
·
Yasushi Akasaka
, Genji Nakamura
, et al.
·
Japanese Journal of Applied Physics
·
106
Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing
2007
·
Daisuke Yokoyama
, Takayuki Iwasaki
, et al.
·
Applied Physics Letters
·
105
Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude
2007
·
K. Sonoda
, K. Ishikawa
, et al.
·
IEEE Transactions on Electron Devices
·
105
Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
2010
·
Takahiro Kozawa
, Hiroaki Oizumi
, et al.
·
Applied Physics Express
·
94
PDF
Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
2010
·
Takahiro Kozawa
, Hiroaki Oizumi
, et al.
·
Japanese Journal of Applied Physics
·
90
PDF
Effects of fluorine dimer excimer laser radiation on the optical transmission and defect formation of various types of synthetic SiO2 glasses
1999
·
Hideo Hosono
, Masafumi Mizuguchi
, et al.
·
Applied Physics Letters
·
90
Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
2010
·
Takahiro Kozawa
, Hiroaki Oizumi
, et al.
·
Japanese Journal of Applied Physics
·
88
PDF
Assessment and Extendibility of Chemically Amplified Resists for Extreme Ultraviolet Lithography: Consideration of Nanolithography beyond 22 nm Half-Pitch
2011
·
Takahiro Kozawa
, Hiroaki Oizumi
, et al.
·
Japanese Journal of Applied Physics
·
85
PDF
Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
2011
·
Takahiro Kozawa
, Hiroaki Oizumi
, et al.
·
Japanese Journal of Applied Physics
·
82
PDF
Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors
2006
·
Satoshi Kamiyama
, Takayoshi Miura
, et al.
·
Thin Solid Films
·
80
Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs
2009
·
M. Kadoshima
, T. Matsuki
, et al.
·
IEEE Electron Device Letters
·
75
Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array
2011
·
Toshiro Hiramoto
, Makoto Suzuki
, et al.
·
IEEE Transactions on Electron Devices
·
71
Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
2007
·
N. Umezawa
, K. Shiraishi
, et al.
·
Applied Physics Letters
·
70
Electrical Properties of Carbon Nanotubes Grown at a Low Temperature for Use as Interconnects
2008
·
Daisuke Yokoyama
, Takayuki Iwasaki
, et al.
·
Japanese Journal of Applied Physics
·
68
PDF
Physical model of BTI, TDDB and SILC in W02-based high-k gate dielectrics
2005
·
K. Torii
, K. Shiraishi
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
61
50 nm gate electrode patterning using a neutral-beam etching system
2004
·
Shuichi Noda
, Hirotomo Nishimori
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
57
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
2006
·
A. Kaneko
, A. Yagishita
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
55
Fluorine-doped SiO_2 glasses for F_2 excimer laser optics:?fluorine content and color-center formation
1999
·
Hideo Hosono
, Masafumi Mizuguchi
, et al.
·
Optics Letters
·
54
Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks
2005
·
Kenji Shiraishi
, Keisaku Yamada
, et al.
·
Thin Solid Films
·
52
Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface
2004
·
K. Shiraishi
, K. Yamada
, et al.
·
Symposium on VLSI Technology
·
52
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Works count:
958
Citation count:
30,550
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