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Pascal Mora

Observed names: Mora Pascal, Mora, P., P. Mora
ORCID: 0000-0001-5047-2821
Observed ORCID: 0000-0001-5047-2821
OpenAlex ID: A5055085547
Energy-driven Hot-Carrier model in advanced nodes
2014 · W. Arfaoui, X. Federspiel, et al. · IEEE International Reliability Physics Symposium proceedings · 44
Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage
2013 · A. Bravaix, Y. Mamy Randriamihaja, et al. · IEEE International Reliability Physics Symposium proceedings · 35
HCI/BTI coupled model: The path for accurate and predictive reliability simulations
2014 · F. Cacho, P. Mora, et al. · IEEE International Reliability Physics Symposium proceedings · 30
Experimental analysis of defect nature and localization under hot-carrier and bias temperature damage in advanced CMOS nodes
2013 · W. Arfaoui, X. Federspiel, et al. · IEEE International Integrated Reliability Workshop final report · 17
Application of compact HCI model to prediction of process effect in 28FDSOI technology
2014 · W. Arfaoui, X. Federspiel, et al. · IEEE International Integrated Reliability Workshop final report · 16
Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks
2014 · A. Bezza, M. Rafik, et al. · IEEE International Reliability Physics Symposium proceedings · 16
New insight on the frequency dependence of TDDB in high-k/metal gate stacks
2013 · A. Bezza, M. Rafik, et al. · IEEE International Integrated Reliability Workshop final report · 11
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation
2015 · P. Mora, X. Federspiel, et al. · IEEE International Reliability Physics Symposium proceedings · 10
Modeling of hot carrier injection across technology scaling
2014 · F. Cacho, W. Arfaoui, et al. · IEEE International Integrated Reliability Workshop final report · 9
Challenges and opportunity in performance, variability and reliability in sub-45nm CMOS technologies
2011 · F. Arnaud, L. Pinzelli, et al. · Microelectronics Reliability · 9
Hot-Carrier Injection Degradation in Advanced CMOS Nodes: A Bottom-Up Approach to Circuit and System Reliability
2014 · Vincent Huard, Florian Cacho, et al. · Springer eBooks · 6
Reliability issues related to Fast Charge Loss Mechanism in Embedded Non Volatile Memories
2006 · Pascal Mora, Sophie Renard, et al. · IEEE International Integrated Reliability Workshop final report · 6
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment
2015 · A. Bezza, M. Rafik, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Multi-Vibrational Hydrogen Release: A Dielectric Breakdown Model for Ultra-thin SiO2/SiON and High-K Stack
2009 · Guillaume C. Ribes, Pascal Mora, et al. · ECS Transactions · 4
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(Invited) Effect of SOI Substrate on CMOS Devices Reliability
2014 · Xavier Federspiel, Wafa Arfaoui, et al. · ECS Transactions · 2
New insight on high-k/metal gate reliability modeling for providing guidelines for process development
2013 · M. Rafik, G. Ribes, et al. · IEEE International Reliability Physics Symposium proceedings · 1
A self heating test structure using poly resistors and P/sup +//N diodes to characterize anomalous charge transfers in embedded flash memories
2005 · P. Mora, P. Waltz, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 1
(Invited) Effect of SOI Substrate on CMOS Devices Reliability
2014 · Xavier Federspiel, Wafa Arfaoui, et al. · ECS Meeting Abstracts
Contact etch stop a-SixNy:H layer: a key factor for single polysilicon flash memory data retention.
2008 · Beylier, G., Benoit, D., et al. · HAL
New Characterization Methodology of Borderless Silicon Nitride Charge Kinetic using C(V) Hysteresis Loops
2007 · Gaelle Beylier, Bruyere Sylvie, et al. · ECS Transactions
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Étude et caractérisation de la fiabilité de cellules mémoire non volatiles pour des technologies CMOS et BICMOS avancées
2007 · Pascal Mora · OpenGrey (Institut de l'Information Scientifique et Technique)
Works count: 21
Citation count: 221
H-index: 9
I10-index: 8
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