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Author

Chloe Guerin

Observed names: C. Guerin, C. Guérin, C. Guérin, ChloÉ Guerin, Chloé Guerin, Chloé Guérin, Guerin Chloe, Guerin, C., Guerin, Chloe, Guerin, Chloé
Observed institutions: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux, CEA Grenoble, Institut Supérieur de l'Électronique et du Numérique, STMicroelectronics (France), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, Laboratoire d'Électronique des Technologies de l'Information, École Polytechnique Fédérale de Lausanne, Université Grenoble Alpes
ORCID: 0000-0002-0148-9966
Observed ORCID: 0000-0002-0148-9966
OpenAlex ID: A5057926730
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
2011 · A. Descoeudres, L. Barraud, et al. · Applied Physics Letters · 274
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Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature
2009 · A. Bravaix, C. Guerin, et al. · IEEE International Reliability Physics Symposium proceedings · 201
General framework about defect creation at the Si∕SiO2 interface
2009 · C. Guerin, V. Huard, et al. · Journal of Applied Physics · 158
NBTI degradation: From transistor to SRAM arrays
2008 · V. Huard, C. Parthasarathy, et al. · IEEE International Reliability Physics Symposium proceedings · 156
The Energy-Driven Hot Carrier Degradation Modes of nMOSFETs
2007 · C. Guerin, V. Huard, et al. · IEEE Transactions on Device and Materials Reliability · 141
New characterization and modeling approach for NBTI degradation from transistor to product level
2007 · V. Huard, C. Parthasarathy, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 113
CMOS device design-in reliability approach in advanced nodes
2009 · Vincent Huard, CR Parthasarathy, et al. · IEEE International Reliability Physics Symposium proceedings · 74
Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes
2007 · Vincent Huard, C. R. Parthasarathy, et al. · IEEE Transactions on Device and Materials Reliability · 56
Breakthroughs in 3D Sequential technology
2018 · L. Brunet, C. Fenouillet-Beranger, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 55
Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies
2006 · M. Denais, A. Bravaix, et al. · IEEE International Reliability Physics Symposium proceedings · 34
Properties of high efficiency silicon heterojunction cells
2011 · D.L. Bätzner, Y. Andrault, et al. · Energy Procedia · 33
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Designing in reliability in advanced CMOS technologies
2006 · C.R. Parthasarathy, M. Denais, et al. · Microelectronics Reliability · 33
Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node
2010 · A. Bravaix, C. Guerin, et al. · IEEE International Reliability Physics Symposium proceedings · 32
28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis
2020 · C. Cavalcante, C. Fenouillet-Beranger, et al. · Symposium on VLSI Technology · 31
Physical Modeling of Negative Bias Temperature Instabilities for Predictive Extrapolation
2006 · V. Huard, C.R. Parthasarathy, et al. · IEEE International Reliability Physics Symposium proceedings · 31
Innovative thermal energy harvesting for zero power electronics
2012 · S. Monfray, O. Puscasu, et al. · IEEE Silicon Nanoelectronics Workshop · 26
Combined effect of NBTI and Channel Hot Carrier effects in pMOSFETs
2006 · C. Guerin, V. Huard, et al. · IEEE International Integrated Reliability Workshop final report · 19
Dielectrics stability for intermediate BEOL in 3D sequential integration
2016 · Fabien Deprat, Claire Fenouillet-Beranger, et al. · Microelectronic Engineering · 17
Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction
2006 · C. Guerin, V. Huard, et al. · IEEE International Integrated Reliability Workshop final report · 17
Guidelines for intermediate back end of line (BEOL) for 3D sequential integration
2017 · C. Fenouillet-Beranger, S. Beaurepaire, et al. · European Solid-State Device Research Conference · 15
Recent advances in low temperature process in view of 3D VLSI integration
2016 · C. Fenouillet-Beranger, P. Batude, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 15
Wafer Scale Insulation of High Aspect Ratio Through-Silicon Vias by iCVD
2024 · Vincent Jousseaume, Chloe Guerin, et al. · ACS Applied Materials & Interfaces · 14
Novel hot-carrier AC-DC design guidelines for advanced CMOS nodes
2008 · C. Guerin, V. Huard, et al. · IEEE International Reliability Physics Symposium proceedings · 13
The Energy-Driven Hot Carrier Degradation Modes
2007 · C. Guerin, V. Huard, et al. · IEEE International Reliability Physics Symposium proceedings · 13
Uniformity and Quality of Monocrystalline Silicon Passivation by Thin Intrinsic Amorphous Silicon in a New Generation Plasma-enhanced Chemical Vapor Deposition Reactor
2010 · Benjamin Strahm, Yoann Andrault, et al. · MRS Proceedings · 8
Works count: 49
Citation count: 1,652
H-index: 17
I10-index: 24
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