Author

H.W. Dinges

Observed names: H. Dinges, H. W. DINGES, H. W. Dinges

Institution: Deutsche Bundespost

Observed institution: Deutsche Bundespost

OpenAlex ID: A5073695309

Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometry

1982 · H. Burkhard, H. W. Dinges, et al. · Journal of Applied Physics · 184

Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry

1992 · H.W. Dinges, H. Burkhard, et al. · Applied Surface Science · 56

Composition and refractive index of Ga1−xAlxAs determined by ellipsometry

1979 · E. Kuphal, H. W. Dinges · Journal of Applied Physics · 35

Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating

1986 · H. Burkhard, E. Kuphal, et al. · Electronics Letters · 19

Round robin investigation of silicon oxide on silicon reference materials for ellipsometry

1993 · J. Vanhellemont, H.E. Maes, et al. · Applied Surface Science · 15

Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47−xAs layers on InP in the wavelength range 280–1900 nm

1993 · H.W. Dinges, H. Burkhard, et al. · Materials Science and Engineering B · 12

Optical properties of anodic oxide films on GaAs by ellipsometry

1978 · H.W. Dinges · Thin Solid Films · 10

Determination of refractive indices of In0.53Al0.40Ga0.07As and In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry

1993 · H.W. Dinges, H. Burkhard, et al. · Applied Surface Science · 8

Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47 - xAs on InP in the wavelength range from 280 to 1900 nm

1993 · H.W. Dinges, H. Burkhard, et al. · Thin Solid Films · 7

Determination of refractive indexes of In0.52Al0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry

1993 · H.W. Dinges, H. Burkhard, et al. · Materials Science and Engineering B · 7

Determination of ion beam etching damage on InP by spectroscopic ellipsometry

1991 · H.W. Dinges, B. Kempf, et al. · Applied Surface Science · 6

Determination of sputter damage on InP by MAI ellipsometry

1990 · H. W. Dinges, B. Kempf, et al. · Surface and Interface Analysis · 4

DETERMINATION OF THE OPTICAL PROPERTIES OF GaAs AND InP BY MULTIPLE ANGLE OF INCIDENCE ELLIPSOMETRY

1983 · H. W. Dinges · Le Journal de Physique Colloques · 4

Ion Beam Sputter Deposition of Refractory Metal Oxides

1994 · B.E. Kempf, H.W. Dinges, et al. · MRS Proceedings · 3

Determination of the refractive index of In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry

1993 · H.W. Dinges, H. Burkhard, et al. · Applied Surface Science · 3

N2/H2O: A New Gas Mixture for Deep Groove Ion Beam Etching of Long Wavelength Quaternary Mushroom Type Laser Structures

1990 · B. KEMPF, R. GOBEL, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3

An ellipsometric study of SiO2/Si3N4 double layers on silicon produced by chemical vapour deposition

1981 · H.W. Dinges · Thin Solid Films · 2

RF-Sputtering of Silicon Nitride Layers on GaAs Substrates: Characterization of an Intermediate Layer Between the Substrate and the Deposited Film

1981 · L. M. F. Kaufmann, R. Tilders, et al. · Springer eBooks · 2

Study of In0.53Ga0.47As/In0.52Al0.48As quantum wells on InP by spectroscopic ellipsometry and photoluminescence

1994 · H.W. Dinges, H. Hillmer, et al. · Surface Science · 1

Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900 nm

2002 · H.W. Dinges, H. Burkhard, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

Thermal Stability of Amophous Ion Beam Sputtered Refractory Oxides for AR/HR DFB Coatings and Low Loss Optical Waveguide Purposes

1995 · B. Kempf, H. W. Dinges · International Conference on Solid State Devices and Materials (SSDM)

Ion Beam Sputter Etching and Deposition with Carbondioxide

1994 · B. Kempf, H. W. Dinges, et al. · International Conference on Solid State Devices and Materials (SSDM)

Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47 – xAs layers on InP in the wavelength range 280–1900 nm

1993 · H.W. Dinges, H. Burkhard, et al. · European Materials Research Society symposia proceedings

Round robin investigation of silicon oxide on silicon reference materials for ellipsometry

1993 · J. Vanhellemont, H.E. Maes, et al. · Elsevier eBooks

Works count: 24

Citation count: 381

H-index: 8

I10-index: 7