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Y. Shimanuki

Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
1990 · Jiro Ryuta, Etsuro Morita, et al. · Japanese Journal of Applied Physics · 227
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Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method
2000 · Naoki Ono, Kounosuke Kitamura, et al. · Japanese Journal of Applied Physics · 83
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Effect of Crystal Pulling Rate on Formation of Crystal-Originated “Particles” on Si Wafers
1992 · Jiro Ryuta, Etsuro Morita, et al. · Japanese Journal of Applied Physics · 55
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Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method
1984 · K. Tomizawa, K. Sassa, et al. · Journal of The Electrochemical Society · 48
Recent advanced applications of AAS and ICP-MS in the semiconductor industry
2003 · Mohammad B. Shabani, Y. Shiina, et al. · Materials Science and Engineering B · 38
Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
1985 · Yasushi Shimanuki, Hisashi Furuya, et al. · Japanese Journal of Applied Physics · 27
Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
1992 · Hideyuki Kondo, Jiro Ryuta, et al. · Japanese Journal of Applied Physics · 23
Formation of Nuclei of Oxygen Precipitates in CZ Silicon Crystals during Crystal Growth Process
1988 · H. Furuya, I. Suzuki, et al. · Journal of The Electrochemical Society · 18
Radial distribution of temperature gradients in growing CZ-Si crystals and its application to the prediction of microdefect distribution
2002 · K Kitamura, J Furukawa, et al. · Journal of Crystal Growth · 17
Effect of Aging Treatment on Microstructure and Tensile Properties of Udimet 520 and Ni-6.38%Al Alloy
1974 · Y. Shimanuki, H. Doi · Transactions of the Japan Institute of Metals · 16
The Role of Carbon in Nucleation of Oxygen Precipitates in CZ Silicon Crystals
1989 · Y. Shimanuki, H. Furuya, et al. · Journal of The Electrochemical Society · 13
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The variation with aging condition of the composition of γ′ phase in a Ni-base superalloy, UDIMET 520
1976 · Y Shimanuki, M Masui, et al. · Scripta Metallurgica · 12
Origins of metal impurities in single-crystal Czochralski silicon
1995 · K. Harada, H. Tanaka, et al. · Journal of Crystal Growth · 11
Anomalous depth distributions of bulk microdefects in heat-treated Czochralski silicon wafers due to nonequilibrium self-interstitials
1995 · Yuhki Satoh, Hisashi Furuya, et al. · Journal of Applied Physics · 8
Crystal Originated Singularities on Silicon Wafers After SC1 Cleaning
1992 · E. Morita, J. Ryuta, et al. · MRS Proceedings · 8
Dislocation-γ′ Interaction and Age-Hardening Mechanism in a Ni-Base Superalloy, Udimet 520
1975 · Y. Shimanuki, H. Doi · Transactions of the Japan Institute of Metals · 7
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Precipitation Behavior of Deposited Metals in Cz-Silicon
1984 · H Suga, Y Shimanuki, et al. · 5
Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
2003 · Mohammad B. Shabani, Y. Shiina, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
Dislocations in GaAs Crytals Grown by As-Pressure Controlled Czochralski Method
1987 · K. Tomizawa, K. Sassa, et al. · Springer eBooks · 4
Evaluation of γ′ Particle Spacing along a Dislocation in a Ni-Base Superalloy, Udimet 520
1981 · Y. Shimanuki · Transactions of the Japan Institute of Metals · 4
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Microstructure and Mechanical Properties of HIP-Consolidated René 95 Powders
1978 · Yasushi Shimanuki, Yoshio Nishino, et al. · Journal of the Japan Society of Powder and Powder Metallurgy · 4
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Influence of a Strain Amplitude Distribution in a Crystal on the Hysteretic Breakaway Loss
1970 · Y. Shimanuki, H. Doi · Journal of Applied Physics · 4
Kinetics of low-temperature out-diffusion of copper from silicon wafers
1999 · Mohammad Bagher Shabani, S. Okuuchi, et al. · 3
Secondary ion mass spectrometry round-robin study of relative sensitivity factors in gallium arsenide
1998 · Y. Homma, F. Tohjou, et al. · Surface and Interface Analysis · 3
Secondary ion mass spectrometry round‐robin study of impurity analysis in gallium arsenide using uniformly‐doped standard gallium arsenide specimens
1994 · Hiroyasu Shichi, Tomoya Ogawa, et al. · Surface and Interface Analysis · 3
Works count: 34
Citation count: 654
H-index: 12
I10-index: 13
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