Work

A 30 ns 64 Mb DRAM with built-in self-test and repair function

Year: 2003

Type: conference-paper

Source: Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

DOI: 10.1109/isscc.1992.200456

Authors: H. Koike, A. Tanabe, T. Takeshima, Y. Aimoto, M. Takada, T. Ishijima, N. Kasai, H. Hada, K. Shibahara, T. Kunio, T. Tanigawa, T. Saeki, M. Sakao, H. Miyamoto, H. Nozue, S. Ohya, T. Murotani, K. Koyama, T. Okuda

Institution: NEC (Japan)

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4248834883

FWCI: 0.897

Cites: 3

Cited by: 10

Related to: 10